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HBTGFR421-KR 参数 Datasheet PDF下载

HBTGFR421-KR图片预览
型号: HBTGFR421-KR
PDF下载: 下载PDF文件 查看货源
内容描述: 1.6 * 1.5 * 0.5毫米Untited ,扩散式平模波长: -.Red :为625nm绿: 525nm的蓝色: 472nm [1.6*1.5*0.5 mm Untited, Diffused flat mold Wavelength: -.Red: 625nm Green: 525nm Blue: 472nm]
分类和应用: 可见光LED光电
文件页数/大小: 13 页 / 1358 K
品牌: SEOUL [ Seoul Semiconductor ]
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Technical Data Sheet
2. Absolute maximum ratings
Value
Parameter
Power Dissipation
Forward Current
Peak Forward Current
Operating Temperature
Storage Temperature
Symbol
Red
P
d
I
F
I
FM *1
T
opr.
T
stg.
69
30
100
Green
66
20
50
-40 ~ 85
-40 ~ 100
Blue
66
20
50
(Ta=25℃)
Unit
mW
mA
mA
*1 I
FM
conditions: Pulse width Tw≤ 1msec and Duty ratio≤1/10.
3. Electro-Optical Characteristics
Parameter
Forward
Voltage
Reverse
Current
Luminous
Intensity
*2
color
Red
Green
Blue
R/G/B
Red
Green
Blue
Red
Wavelength
Green
Blue
Red
Spectral
Bandwidth
Viewing
Angle
*3
Green
Blue
R,G,B
1/2
I
F
=30
(total)
-
Δλ
I
F
=10
λ
d
I
F
=20
I
V
I
F
=10
I
R
V
R
=5V
V
F
I
F
=10
Symbol
Condition
Min
1.7
2.7
2.7
-
50
90
25
615
515
465
Typ
1.9
3.1
3.0
-
70
220
50
625
525
472
15
30
20
120
(Ta=25℃)
Max
2.3
3.3
3.3
10
90
270
85
635
535
477
nm
mcd
V
Unit
nm
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package.
*3
θ1/2
is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] Tolerance : Iv
±
10%,
λ
D
±
2nm, , V
F
±
0.1V
Rev. 02
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)