6. CHARACTERISTIC DIAGRAMS
I
rel
= f
(
θ
),
T
a
=
25ºC
1.0
100
I
F
= f
(V
F
),
T
a
=
25ºC
Relative Radient Intensity I
e
(Nor)
0.8
0.6
Forward Current I
F
[mA]
-60
-30
0
30
60
90
10
0.4
0.2
1
0.0
-90
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
Off Axis Angle [deg.]
Forward Voltage V
F
[V]
Off Axis Angle vs. Relative Intensity
Forward Voltage vs. Forward Current
2.0
I
V
= f
(I
F
),
T
a
=
25ºC
120
I
F
= f
(T
a
),
T
a
=
25ºC
Relative Radiant Intensity I
e
[mW/sr]
1.5
100
Forward Current I
F
[mA]
0
20
40
60
80
100
80
1.0
60
0.5
40
20
0.0
Forward Current I
F
[mA]
0
-60
-40
-20
0
20
40
60
o
80
100
120
Ambient Temperature T
a
[ C]
Forward Current vs. Relative Intensity
Ambient Temperature vs. Forward Current
<050201> Rev. 0.0
LI521
SEOUL SEMICONDUCTOR CO., LTD.
148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea
TEL : 82-2-3281-6269 FAX : 82-2-857-5430
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