6. CHARACTERISTIC DIAGRAMS
I
rel
= f
(
θ
),
T
a
=
25ºC
1.0
100
I
F
= f
(V
F
),
T
a
=
25ºC
Y
X
0.8
Relative Luminous Intensity
0.6
Forward Current I
F
[mA]
-80
-60
-40
-20
0
20
40
60
80
100
10
0.4
0.2
1
0.0
-100
2.4
2.6
2.8
3.0
3.2
3.4
3.6
Off Axis Angle [deg.]
Forward Voltage V
F
[V]
Off Axis Angle vs. Relative Intensity
Forward Voltage vs. Forward Current
I
V
= f
(I
F
),
T
a
=
25ºC
1.6
40
I
F
= f
(T
a
),
T
a
=
25ºC
Relative Luminous Intensity
0.8
Forward Current I
F
[mA]
0
5
10
15
20
25
30
1.2
30
20
0.4
10
0.0
0
-40
-20
0
20
40
60
o
80
100
Forward Current I
F
[mA]
Ambient Temperature T
a
[ C]
Forward Current vs. Relative Intensity
Ambient Temperature vs. Forward Current
<060712> Rev. 0.1
LB700D
SEOUL SEMICONDUCTOR CO., LTD.
148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea
TEL : 82-2-3281-6269 FAX : 82-2-857-5430
-6-
SEOUL [ Seoul Semiconductor ]
