GL480/GL480Q/GL483Q
GL480/GL480Q
GL483Q
s
Features
1. Narrow beam angle (
∆θ :
TYP. ± 13˚ )
2. Radiant flux (
Φ
e : MIN. 0.7mW at
I
F
= 20mA )
3. Compact, high reliability by chip coating
( GL480Q/GL483Q )
4. Long lead type (
GL483Q
)
Infrared Emitting Diode
s
Outline Dimensions
GL480/GL480Q
2- C0.5
Rest of
gate
0.3
MAX.
3.0
±
0.2
1.5
Emitter center
1.15
0.75
( Unit : mm )
Pink transparent
epoxy resin (
GL480
)
Transparent
epoxy resin (
GL480Q
)
4.0
±
0.2
1.7
0.5
MIN.
+
17.5
-
1.5
1.0
0.8
MAX.
R0.8
±
0.1
60
0.15
˚
2
s
Applications
2.95
±
0.2
2.15
±
0.2
1
1. Copiers
2. Floppy disk drives
3. Optoelectronic switches
2.54
1.6
2- 0.4
1
Cathode
2
Anode
2.8
1
GL483Q
±
0.2
2
-
C0.5 3.0
2
1.5
Emitter center
1.15
0.75
Transparent
epoxy resin
Rest of
gate
0.3
MAX.
4.0
±
0.2
2
60
0.8
MAX.
18.5
1.6
±
0.2
0.15
˚
1.7
2- 0.6
40.0
±
1
3.0
1
2.95
±
0.2
2.15
±
0.2
0.5
MIN.
2.54
1.6
2
-
0.4
1
Cathode
2
Anode
s
Absolute Maximum Ratings
Parameter
Power dissipation
Forward current
*1
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
Symbol
P
I
F
I
FM
V
R
T
opr
T
stg
T
sol
( Ta = 25˚C )
Rating
75
50
1
6
- 25 to + 85
- 40 to + 85
260
Unit
mW
mA
A
V
˚C
˚C
˚C
2.8
1
2
*1 Pulse width<=100
µ
s, Duty ratio = 0.01
*2 For 3 seconds at the position of 1.4mm from the bottom face of resin package.
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
