GP1A57HRJ00F 参数 Datasheet PDF下载

GP1A57HRJ00F

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Parts

This product is assembled using the below parts.

• Photodetector (qty. : 1)

[Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit]

Category

Photodiode

Maximum Sensitivity

wavelength (nm)

900

Sensitivity

wavelength (nm)

400 to 1 200

Response time (μs)

3

• Photo emitter (qty. : 1)

Category

Infrared emitting diode

(non-coherent)

Material

Gallium arsenide (GaAs)

Maximum light emitting

wavelength (nm)

950

I/O Frequency (MHz)

0.3

• Material

Case

Black NORYL resin

Lead frame plating

Solder dip. (Sn−3Ag−0.5Cu)

• Others

Laser generator is not used.

Sheet No.: D3-A03901EN

8