GP1S036HEZ
I
Electro-optical Characteristics
Parameter
Forward voltage
Input
Reverse current
*3
Output Collector dark current
Collector current
*4
*3
Leak current
Coupling
Rise time
Characteristics
Response time
Fall time
Collector-emitter saturation voltage
Symbol
V
F
I
R
I
CEO
I
C
I
LEAK
t
r
t
f
V
CE(sat)
Conditions
I
F
=20mA
V
R
=3V
V
CE
=20V
V
CE
=5V,
I
F
=5mA
V
CE
=5V,
I
F
=5mA
V
CE
=5V,
I
C
=100µA
R
L
=1kΩ
I
F
=10mA,
I
C
=55µA
MIN.
−
−
−
55
−
−
−
TYP.
1.2
−
−
−
50
50
−
MAX.
1.4
10
100
300
17
150
150
0.4
(T
a
=25˚C)
Unit
V
µA
nA
µA
µA
µs
µs
V
*3 Output and coupling characteristics are common to the both phototransistors
*4 Characteristics except leak current is measured at
θ=180˚, φ=0˚
Leak current is the output current of transistor when
θ=±90˚, φ=0˚
and I
C
=OFF
I
Detecting Angle Characteristics
θ
0˚
I
C1
I
C2
OFF
θ
I
C1
I
C2
240˚
ON
*5
30˚
60˚
OFF
*5
300˚
330˚
*5
OFF
120˚
*5
ON
150˚
210˚
ON
*5
Device state diagram
−
φ
+
−
θ
+
360˚
OFF
❈
Conditions : I
F
=5mA,
V
CE
=5V, φ=±5˚
*5
Indefinite
PT
GL
I
C1
: Output current of phototransistors PT
1
I
C2
: Output current of phototransistors PT
2
θ
: Device condition : Refer to the figure
φ
: Device condition : Refer to the figure
ON :Output current of phototransistors : 55µA or more
OFF : Output current of phototransistors : 17µA or less
❈
Output current of ON/OFF is output when device is at a standstill
Gravity direction
Gravity direction
(Viewing from detecting side)
I
Supplement
(Viewing
from detecting side)
PT
1
PT
2
Gravity direction
PT
2
PT
1
PT
1
output
PT
2
output
(ON)
(ON)
(ON)
(OFF)
(OFF)
(OFF)
(OFF)
(ON)
(ON)
(ON)
PT : Detecting
PT : Opaque
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
