Dichromatic Chip LED Device
LT1tt82A series
LT1tt82A series
s
Outline Dimensions
(Unit : mm)
3.3!2.9mm, 1.1mm Thickness,
High-luminosity, Dichromatic
Chip LED Devices with Lens
s
Radiation Diagram
(T
a
=25˚C)
Colorless transparency
3.3
-40˚
-30˚
-20˚
-10˚
0˚ 100 +10˚
+20˚
+30˚
+40˚
Relative luminous intensity(%)
4
E.K
80
T.S
3
-50˚
+50˚
60
0.6 0.4
0.85 0.95
2.9
1.9
0.4
2.9
0.4
1
2
-60˚
+60˚
40
+70˚
20
+80˚
-70˚
4-R0.2
(R0.5)
0.9
+0.1
0.16
-0.06
-80˚
1.5
0.9
(R0.2)
0.8
1.1
-0.1
+0.2
-90˚
0
+90˚
(0.3)
(0.3) (0.3)
(0.3)
Pin connections
Pin
1
2
3
4
series
ET
Red
Anode
(HL)
Cathode
Cathode Yellow-green
Anode
KS
Sunset
orange
Unspecified tolerance:±0.2
Green
s
Absolute Maximum Ratings*
Power dissipation Forward current Peak forward current
P
I
F
I
FM*1
Model No. Radiation color Radiation material
(mW)
(mA)
(mA)
Yellow-green
Red(High-luminosity)
Green
LT1KS82A
Sunset orange
LT1ET82A
*
GaP
GaAIAs on GaAs
GaP
GaAsP on GaP
50
66
50
85
20
30
20
30
50
50
50
50
0to0.15
0.3
(T
a
=25˚C)
Derating factor Reverse voltage Operating temperature Storage temperature Soldering temperature
(mA/˚C)
V
R
T
opr
T
stg
T
sol*2
(V)
(˚C)
(˚C)
(˚C)
DC Pulse
0.27
0.40
0.27
0.40
0.67
0.67
0.67
0.67
5
5
5
5
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +100
-25 to +100
-25 to +100
-25 to +100
350
350
350
350
The value is specified under the condition that either color is lightened separately. When the both diodes are lightened simultaneously,
the power dissipation of each diode should be less than the half of the value specified in this table.
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s
Electro-optical Characteristics
Lens
Radiation
Model No.
color
type
Yellow-green
Red(High-luminosity)
Colorless
transparency
Green
LT1KS82A
Sunset orange
LT1ET82A
Forward voltage
V
F
(V)
TYP
1.95
1.75
1.95
2.0
MAX
2.5
2.2
2.5
2.8
Peak emission wavelength
I
F
λ
p
(nm)
(mA)
TYP
565
10
660
20
555
10
610
20
Luminous intensity
I
V
(mcd)
TYP
7.0
11.8
2.4
10.5
I
F
(mA)
10
20
10
20
Spectrum radiation bandwidth
∆λ(nm)
TYP
30
20
25
35
I
F
(mA)
10
20
10
20
Reverse current
V
R
I
R
(µA)
(V)
MAX
10
4
10
4
10
4
10
4
Terminal capacitance
C
t
(pF)
TYP
35
30
40
15
(T
a
=25˚C)
Page for
characteristics
(MH
Z
)
diagrams
→
1
→
1
→
1
→
1
¡In
the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
¡Data
for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
(Notice)
10
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