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PC929 参数 Datasheet PDF下载

PC929图片预览
型号: PC929
PDF下载: 下载PDF文件 查看货源
内容描述: 短路保护电路内置光电耦合器适用于逆变器驱动MOS -FET / IGBT [Shortcircuit Protector Circuit Built-in Photocoupler Suitable for Inverter-Driving MOS-FET/IGBT]
分类和应用: 光电双极性晶体管驱动
文件页数/大小: 6 页 / 97 K
品牌: SHARP [ SHARP ELECTRIONIC COMPONENTS ]
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PC929
s
Operations of Shortcircuit Protector Circuit
PC929
14 GND
V
13
CC
O
1
12
11
Amp.
Photodiode
Interface
IGBT protector circuit
9
8
10
C
FS
GND
V
EE
Feedback to primary side
C
P
O
2
R
G
R
C
IGBT
V
CC
Anode
Cathode
Light emitting diode
3
1
Constant voltage circuit
TTL, microcomputer, etc.
1. Detection of increase in V
CE
(sat) of IGBT due to overcurrent by means of C-terminal 9 terminal)
2. Reduction of the IGBT gate voltage, and suppression of the collector current.
3. Simultaneous output of signals to indicate the shortcircuit condition (FS signal) from FS terminal to the microcomputer
In the case of instantaneous shortcircuit, run continues.
4. Judgement and processing by the microcomputer
At fault, input to the photocoupler is cut off, and IGBT is turned OFF.
Precautions for Operation
1. It is recommended that a capacitor of about 1000pF is added between C-terminal and GND in order to prevent
malfunction of C-terminal due to noise. In the case of capacitor added, rise of the detecting voltage is delayed.
Thus, use together a resistance of about 1kΩ set between Vcc and C-terminal.
The C-terminal rise time varies with the time constant of CR added. Check sufficiently before use.
2. The light-detecting element used for this product is provided with a parasitic diode between each terminal and GND.
When a terminal happens to reach electric potential lower than GND potential even in a moment, malfunction
or rupture may result. Design the circuit so that each terminal will be kept at electric potential lower than the
GND potential at all times.