S21MD4V
S21MD4V
..
s
Features
1. Built-in zero-cross circuit
2. High critical rate of rise of OFF-state volt-
age ( dV/dt : MIN. 100V/
µs
)
3. High repetitive peak OFF-state voltage
( V
DRM
: MIN. 600V )
4. Isolation voltage between input and output
V
iso
: 5 000Vrms
5. UL recognized, file No. E64380 (
S21MD4V/ S21MD4W
)
g
S21MD4V
is for 200V line
Built-in Zero-cross Circuit, High Noise
Resistance Type Phototriac Coupler
s
Outline Dimensions
2.54
±
0.25
6
5
4
6.5
±
0.5
Internal connection
diagram
6
5
4
Zero-cross
circuit
1
2
3
1 Anode
2 Cathode
3 NC
7.62
±
0.3
3.5
±
0.5
4 Anode/
Cathode
5 No external
connection
6 Anode/
Cathode
g
Lead forming type of
S21MD4V
is also available. (
S21MD4W
)
gg
TUV ( DIN-VDE0884 ) approved type is also available as an option.
( Unit : mm )
S21MD4V
1
Anode
mark
2
3
0.9
±
0.2
1.2
±
0.3
7.12
±
0.5
s
Applications
3.35
±
0.5
3.7
±
0.5
0.5
±0.1
0.5
TYP.
1. For triggering medium/high power triac
0.26
±
0.1
θ
:
0 to 13
˚
θ
s
Absolute Maximum Ratings
Parameter
Input
Forward current
Reverse voltage
RMS ON-state current
∗1
Peak one cycle surge current
Repetitive peak OFF-state voltage
∗2
Isolation voltage
Operating temperature
Storage temperature
∗3
Soldering temperature
Symbol
I
F
V
R
I
T
I
surge
V
DRM
V
iso
T
opr
T
stg
T
sol
Rating
50
6
100
1.2
600
5 000
- 30 to + 100
- 55 to + 125
260
( Ta = 25˚C )
Unit
mA
V
mA
rms
A
V
V
rms
˚C
˚C
˚C
Output
∗1
Sine wave
∗2
40 to 60% RH, AC for 1 minute, f = 60HZ
∗3
For 10 seconds
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
