AO3162
600V,0.034A N-Channel MOSFET
General Description
The AO3162 is fabricated using an advanced high vol tage MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC applications. By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
700V@150℃
0.034A
< 500Ω
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A,F
B
Maximum
600
±30
0.034
0.028
0.16
5
1.39
0.89
-50 to 150
Units
V
V
A
V/ns
W
°
C
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
dv/dt
P
D
T
J
, T
STG
Pulsed Drain Current
Peak diode recovery dv/dt
T
A
=25°
C
Power Dissipation
A
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
