Analog
Freescale
Freescale
Freescale
ower
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r
DS(on)
assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are voltage control
small signal switch, power management in
portable and battery-powered products
such as computer portable electronics and
other battery power application.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Fast Switch
Low Gate Charge
Miniature SOT-23 Surface Mount Package
Saves Board Space
o
AO3409/MC3409
AM2319P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.20 @ V
GS
= -10 V
-30
0.30 @ V
GS
= -4.5V
I
D
(A)
-2.1
-1.7
G
D
S
AB SOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
-30
V
DS
V
Gate-Source Voltage
±
20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-2.1
-1.7
±
10
-0.4
1.25
0.8
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERM AL RESISTANCE RATINGS
Parame te r
t <= 5 sec
a
Maximum Junction-to-Ambient
Steady-State
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
R
T HJA
M aximum Units
250
o
C/W
285
1
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
