AO3435
20V P-Channel MOSFET
General Description
The AO3435 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor
applications.
Features
V
DS
= -20V
I
D
= -3.5A
R
DS(ON)
< 70mΩ
R
DS(ON)
< 90mΩ
R
DS(ON)
< 110mΩ
R
DS(ON)
< 130mΩ
(V
GS
= -4.5V)
(V
GS
=- 4.5V)
(V
GS
= -2.5V)
(V
GS
= -1.8V)
(V
GS
= -1.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
10 Sec
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Steady State
-20
±8
-2.9
-2.3
-25
1
0.6
Units
V
V
A
V
GS
T
A
=25°
C
C
T
A
=70°
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
1.4
0.9
-3.5
-2.7
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Steady-State
Maximum Junction-to-Lead
C
-55 to 150
Symbol
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
