AO3438
20V N-Channel MOSFET
General Description
The AO3438 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
Features
V
DS
= 20V
I
D
= 3A
R
DS(ON)
< 62mΩ
R
DS(ON)
< 70mΩ
R
DS(ON)
< 85mΩ
(V
GS
= 4.5V)
(V
GS
= 4.5V)
(V
GS
= 2.5V)
(V
GS
= 1.8V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±8
3
2.5
16
1.4
0.9
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°
C/W
°
C/W
°
C/W
1/4
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
