AO4420A
30V N-Channel MOSFET
General Description
The AO4420A uses advanced trench technology to provide excellent R
DS(ON)
shoot-through immunity
and body diode characteristics. This device is suitable for use as a synchronous switch in PWM
applications.
Features
V
DS
(V) = 30V
I
D
= 13.7A (V
GS
= 10V)
R
DS(ON)
< 10.5mΩ (V
GS
= 10V)
R
DS(ON)
< 12mΩ (V
GS
= 4.5V)
,
SOIC-8
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
B
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
B
Maximum
30
±12
13.7
9.7
60
20
60
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
54
21
Max
40
75
30
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
