AO4435
30V P-Channel MOSFET
General Description
The AO4435 uses advanced trench technology to provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
V
DS
= -30V
I
D
= -10.5A
R
DS(ON)
< 14m
R
DS(ON)
< 18m
R
DS(ON)
< 36m
(V
GS
= -20V)
(V
GS
= -20V)
(V
GS
= -10V)
(V
GS
= -5V)
SOIC-8
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Power Dissipation
A
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
Maximum
-30
±25
-10.5
-8
-80
3.1
2.0
-20
60
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
