AO4478
30V N-Channel MOSFET
General Description
The AO4478 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge. This
device is suitable for use as general puspose, PWM and a load switch applications.
Features
V
DS
(V) = 30V
I
D
= 9A (V
GS
= 10V)
R
DS(ON)
<19mΩ (V
GS
= 10V)
R
DS(ON)
<26mΩ (V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
C
Maximum
30
±25
9.0
7.0
60
17
14
3.1
2.0
-55 to 150
Units
V
V
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
Iar
Ear
P
D
T
J
, T
STG
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
T
A
=25°
C
Power Dissipation
B
C
T
A
=70°
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Lead
C
A
mJ
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
