AO4494
30V N-Channel MOSFET
General Description
The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is for PWM applications.
Features
V
DS
(V) = 30V
I
D
= 18A
R
DS(ON)
< 6.5mΩ
R
DS(ON)
< 9.5mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
C
Maximum
30
±20
18
14
130
32
51
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
C
=25°
C
T
C
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
C
T
C
=25°
Power Dissipation
B
C
T
C
=70°
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
