AO4600
General Description
Complementary Enhancement Mode
Field Effect Transistor
The AO4600 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are electrically identical.
Features
n-channel
V
DS
(V) = 30V
R
DS(ON)
< 27mΩ
< 32mΩ
< 50mΩ
S2
G2
S1
G1
1
2
3
4
8
7
6
5
p-channel
-30V
(V
GS
=
-10V)
I
D
= 6.9A
(V
GS
= 10V)
-5A
< 49mΩ (V
GS
=- 10V)
< 64mΩ (V
GS
=- 4.5V)
< 120mΩ (V
GS
=
-2.5V)
D2
D2
D1
D1
D2
D1
G2
S2
G1
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max n-channel
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±12
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
6.9
5.8
40
2
1.44
-55 to 150
W
°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
1 / 10
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