AO4611
60V Dual P + N-Channel MOSFET
General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,
and for a host of other applications.
Features
N-Channel
V
DS
(V) = 60V
I
D
= 6.3A (V
GS
=10V)
R
DS(ON)
< 25mΩ (V
GS
=10V)
< 30mΩ (V
GS
=4.5V)
< 42mΩ (V
GS
= -10V)
< 52mΩ (V
GS
= -4.5V)
P-Channel
-60V
-4.9A
SOIC-8
D2
Top View
S2
G2
S1
G1
D2
D2
D1
D1
D1
G2
S2
G1
S1
n-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
p-channel
Units
V
V
A
Max p-channel
-60
±20
-4.9
-3.9
-30
2
1.28
-55 to 150
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
±20
6.3
5
40
2
1.28
-55 to 150
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
60
62.5
110
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
