AO4616
30V Complementary MOSFET
General Description
The AO4616 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
Features
N-Channel
V
DS
= 30V
I
D
= 8A (V
GS
=10V)
R
DS(ON)
< 20m
< 28m
(V
GS
=10V)
(V
GS
=4.5V)
P-Channel
-30V
-7A (V
GS
=-10V)
R
DS(ON)
< 22m
< 40m
(VGS=-10V)
(VGS=-4.5V)
SOIC-8
D2
Top View
S2
G2
S1
G1
D2
D2
D1
D1
D1
G2
G1
S2
S1
n-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Max n-channel
V
DS
Drain-Source Voltage
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
C
C
p-channel
Units
V
V
A
A
mJ
W
°
C
Max p-channel
-30
±20
-7
-6
-40
27
36
2
1.3
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
±20
8
6.5
40
19
18
2
1.3
-55 to 150
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
