AO4706
30V N-Channel MOSFET
General Description
SRFET
TM
The AO4706 uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose applications.
Features
V
DS
(V) = 30V
I
D
=16.5A (V
GS
= 10V)
R
DS(ON)
< 6.8mΩ (V
GS
= 10V)
R
DS(ON)
< 8.2mΩ (V
GS
= 4.5V)
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
B
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Maximum
30
±12
16.5
13.2
100
30
135
3.1
2.0
-55 to 150
Units
V
V
A
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
