AO4720
30V N-Channel MOSFET
General Description
SRFET
TM
The AO4720 uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose applications.
Features
V
DS
(V) = 30V
I
D
=13A
(V
GS
= 10V)
R
DS(ON)
< 11mΩ (V
GS
= 10V)
R
DS(ON)
< 17.5mΩ (V
GS
= 4.5V)
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
C
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
V
DS
V
GS
Max
30
±20
13
11
120
21
66
3.1
2
-55 to 150
Units
V
V
A
A
A
mJ
W
°
C
T
A
=25°
C
T
A
=70°
C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
60
17
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
1/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
