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AO4771 参数 Datasheet PDF下载

AO4771图片预览
型号: AO4771
PDF下载: 下载PDF文件 查看货源
内容描述: 30V P沟道MOSFET [30V P-Channel MOSFET]
分类和应用:
文件页数/大小: 6 页 / 488 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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AO4771
30V P-Channel MOSFET
General Description
AO4771 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional blocking switch,or for "standard buck" DC-DC conver sion
applications.
Features
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-4.5V)
-30V
-4A
< 68mΩ
< 105mΩ
SOIC-8
Top View
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
K
A
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
MOSFET
Parameter
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Schottky
Units
V
V
A
A
mJ
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
V
KA
I
F
P
D
T
J
, T
STG
±20
-4
-3
-18
11
6
30
4
2.5
2
1.3
-55 to 150
2
1.3
-55 to 150
Avalanche energy L=0.1mH
Schottky reverse voltage
C
Continuous Forward T
A
=25°
Current
Power Dissipation
B
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter: MOSFET
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
Parameter: Schottky
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
R
θJA
R
θJL
Typ
48
74
32
49
72
31
Max
62.5
90
40
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
t
10s
Steady-State
Steady-State
1/6
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