Freescale
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AO48 24/ MC48 24
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
13.5 @ V
GS
= 10V
30
20 @ V
GS
= 4.5V
I
D
(A)
10
8
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
±20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
Units
V
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
10
8.2
±50
2.3
2.1
1.3
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70 C
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
a
t <= 5 sec
t <= 5 sec
Symbol
R
θJC
R
θJA
Maximum
40
60
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
