AO4826
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4826 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Standard Product AO4826 is Pb-free
(meets ROHS & Sony 259 specifications). AO4826L is a Green Product ordering option. AO4826 and
AO4826L are electrically identical.
Features
V
DS
(V) = 60V
I
D
= 6.3A (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
D2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
60
±20
6.3
5
40
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
50
73
31
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
