AO4828
60V
Dual N-channel MOSFET
General Description
The AO4828 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features
V
DS
(V) = 60V
I
D
= 4.5A (V
GS
= 10V)
R
DS(ON)
< 56mΩ (V
GS
= 10V)
R
DS(ON)
< 77mΩ (V
GS
= 4.5V)
SOIC-8
D
1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
D
2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
B
Maximum
60
±20
4.5
3.6
20
2
1.28
19
18
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
I
AR,
I
AS
E
AR,
E
AS
T
J
, T
STG
W
A
mJ
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
60
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
