AO4830
80V
Dual N-channel MOSFET
General Description
The AO4830 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge . This
device is suitable for use as a load switch or in PWM applications.
Features
V
DS
(V) = 80V
I
D
= 3.5A
R
DS(ON)
< 75mΩ
(V
GS
= 10V)
(V
GS
= 10V)
SOIC-8
D1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
C
Maximum
80
±30
3.5
2.9
18
16
12.8
2
1.3
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
mJ
W
°
C
Repetitive avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
