AO4884
40V Dual N-Channel MOSFET
General Description
The AO4884 uses advanced trench technology to provide excellent R
DS(ON)
with low gate charge. This is an all
purpose device that is suitable for use in a wide range of power conversion applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
40V
10A
< 13mΩ
< 16mΩ
SOIC-8
D1
D2
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
40
±20
10
8
50
35
61
2
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
C
T
A
=70°
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
