AO4900
Dual N-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AO4900 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost
efficiency further.
Standard Product AO4900 is Pb-free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option. AO4900 and AO4900L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
S2/A
G2
S1
G1
1
2
3
4
8
7
6
5
D2/K
D2/K
D1
D1
G2
S2
SCHOTTKY
D2
K
D1
SOIC-8
A
G1
S1
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
A
Pulsed Drain Current
B
MOSFET
30
±12
6.9
5.8
40
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
A
T
A
=70°C
I
F
I
FM
30
3
2
2
1.44
-55 to 150
Typ
48
74
35
47.5
71
32
40
2
1.44
-55 to 150
Max
62.5
110
40
62.5
110
40
V
A
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
