AO4916, AO4916L
N-Channel Enhancement Mode Field
Effect Transistor with Schcttky Diode
General Description
The AO4916 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost
efficiency further. AO4916L ( Green Product ) is offered in a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 17mΩ (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
G2
D1/S2/K
D1/S2/K
D1/S2/K
D1
K
D2
G1
S1
A
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
30
±20
8.5
6.6
40
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
A
t
≤
10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
T
A
=70°C
I
F
I
FM
30
3
2
2
1.28
-55 to 150
Typ
48
74
35
47.5
71
32
40
2
1.28
-55 to 150
Max
62.5
110
40
62.5
110
40
V
A
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
°C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
