AO4938
30V Dual N-Channel MOSFET
General Description
The AO4938 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel withthe synchronous MOSFET to boost efficiency further.
Features
FET1(N-Channel)
V
DS
= 30V
I
D
= 8.8A (V
GS
=10V)
R
DS(ON)
< 16m
< 22m
(V
GS
=10V)
(V
GS
=4.5V)
FET2(N-Channel)
30V
8A (V
GS
=10V)
R
DS(ON)
< 19m
< 28m
(V
GS
=10V)
(V
GS
=4.5V)
Top View
D2
D2
G1
S1
G2
S2/D1
S2/D1
S2/D1
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
D1
D2
G2
G1
S1
S2
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
Max FET2
30
±20
8
6.5
40
13
25
2
1.3
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
C
±20
8.8
7.1
60
21
66
2
1.3
-55 to 150
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.3mH
Power Dissipation
B
T
A
=25°
C
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
1/8
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
