AO5804E
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO5804E/L uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. AO5804E and AO5804EL are electrically identical.
-RoHS Compliant
-AO5804EL is Halogen Free
Features
V
DS
(V) = 20V
I
D
= 0.5 A (V
GS
= 4.5V)
R
DS(ON)
< 0.55Ω (V
GS
= 4.5V)
R
DS(ON)
< 0.68Ω (V
GS
= 2.5V)
R
DS(ON)
< 0.80Ω (V
GS
= 1.8V)
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
A, F
Current
Pulsed Drain Current
Power Dissipation
A
B
Steady State
20
±8
0.5
0.45
3
0.28
0.18
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
0.5
0.5
0.38
0.24
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
275
360
300
Max
330
450
350
Units
°C/W
°C/W
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
