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AO6401 参数 Datasheet PDF下载

AO6401图片预览
型号: AO6401
PDF下载: 下载PDF文件 查看货源
内容描述: P通道20 -V ( DS ) MOSFET的高功率和电流处理能力 [P-Channel 20-V (D-S) MOSFET High power and current handling capability]
分类和应用:
文件页数/大小: 3 页 / 287 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
 浏览型号AO6401的Datasheet PDF文件第2页浏览型号AO6401的Datasheet PDF文件第3页  
Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature TSOP-6 Surface Mount Package
Saves Board Space
High power and current handling capability
AO6 401 / MC6 401
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
56 @ V
GS
= -4.5V
-26.5
80 @ V
GS
= -2.5V
I
D
(A)
-4.9
-4.2
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
-26.5
V
DS
V
Gate-Source Voltage
V
GS
±12
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-4.9
-4.0
±20
-1.7
2.0
1.3
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
t <= 5 sec
Maximum
62.5
110
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
www.freescale.net.cn
1