Freescale
AO6409/ MC6409
P-Channel 20-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
r
DS(on)
(mΩ)
V
DS
(V)
42 @ V
GS
= -4.5V
57 @ V
GS
= -2.5V
-20
80 @ V
GS
= -1.8V
I
D
(A)
-5.7
-4.9
-4.1
TSOP-6
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
-20
V
GS
Gate-Source Voltage
±8
T
A
=25°C
-5.7
I
D
Continuous Drain Current
a
T
A
=70°C
-4.6
b
I
DM
Pulsed Drain Current
-20
a
I
S
-2.5
Continuous Source Current (Diode Conduction)
T
A
=25°C
2
P
D
Power Dissipation
a
T
A
=70°C
1.3
T
J
, T
stg
-55 to 150
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
Maximum Junction-to-Ambient
a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
62.5
R
θJA
110
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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