Freescale
N & P-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
G1
S2
G2
AO6601 / MC6601
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
30
-30
TSOP-6
Top View
1
2
3
6
5
4
D1
S1
D2
G
1
S
1
N-Channel MOSFET
I
D
(A)
3.7
3.1
-2.7
-2.2
S
2
G
2
D
2
P-Channel MOSFET
0.063 @ V
GS
= 10V
0.090 @ V
GS
= 4.5V
0.112 @ V
GS
= -10V
0.172 @ V
GS
= -4.5V
D
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parame ter
Symbol N-Channel P-Channe l Units
30
-30
Drain-Source Voltage
V
DS
V
V
GS
±20
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
o
o
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
P
D
T
J
, T
stg
3.7
2.9
8
1.05
1.15
0.7
-2.7
-2.1
-8
-1.05
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
Operating Junction and Storage Temperature Range
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady State
Symbol
R
thJA
N-Channel
Typ
Max
93
130
110
150
P-Channel
Typ
Max
93
130
110
150
Unit
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
