AO6810
30V Dual N-Channel MOSFET
General Description
The AO6810 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
3.5A
< 50mΩ
< 70mΩ
D1
D2
Top View
G
1
1
2
3
S2
G2
6
5
4
D
1
S1
D
2
G1
S1
G2
S2
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
30
±20
3.5
3
20
1.15
0.73
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°
C/W
°
C/W
°
C/W
1/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
