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AO7412 参数 Datasheet PDF下载

AO7412图片预览
型号: AO7412
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道20V ( DS ) MOSFET高性能沟道技术 [N-Channel 20V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 4 页 / 359 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-3 saves board space
Fast switching speed
High performance trench technology
AO741 2/ MC741 2
PRO
DUCT SUM A
M RY
V (V
)
r
DS(on)
(Ω)
DS
0.058 @ V
S
= 4.5 V
G
20
0.082 @ V
S
= 2.5V
G
I
D
(A
)
2.0
1.7
G
D
S
ABSOLUTE MAX
IMUM RATING (T
A
= 25 C UNLESS OTHERW
S
ISE NOTED)
Sym
bol Maxim
um Units
Param
eter
Drain-Source Voltage
20
V
DS
V
G
ate-Source Voltage
V
GS
±8
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
2.0
1.7
±20
1.6
0.34
0.22
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Tem
perature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol Maximum Units
R
THJA
100
166
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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