Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-3 saves board space
Fast switching speed
High performance trench technology
AO7 4 15 / MC7 4 15
P DU T SU
RO C
MMA
RY
V (V
)
r
DS(on)
(O M)
H
DS
0.079 @ V
S
= -4.5V
G
-20
0.110 @ V
S
= -2.5V
G
I
D
(A
)
-1.7
-1.5
G
D
S
A
BSOLUTE MA
XIMUM RA
TINGS (T
A
= 25 C UNLESS OTHERW
ISE NOTED)
Param
eter
Sym
bol Maxim
um Units
-20
V
DS
Drain-Source Voltage
V
V
GS
±8
G
ate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-1.7
-1.4
-2.5
±0.28
0.34
0.22
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Tem
perature Range
T
J
, T
stg
-55 to 150
C
THERM L RESISTA
A
NCE RA
TING
S
Param
eter
M
axim Junction-to-Am
um
bient
a
Sym
bol
t <= 5 sec
Steady-State
R
THJA
Maxim
um
375
430
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
