AO8701, AO8701L
P-Channel Enhancement Mode Field
Effect Transistor with Schcttky Diode
General Description
The AO8701 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free package.
Features
V
DS
(V) = -30V
I
D
= -4.2A
R
DS(ON)
< 50mΩ (V
GS
= 10V)
R
DS(ON)
< 65mΩ (V
GS
= 4.5V)
R
DS(ON)
< 120mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
D
D
S
S
G
1
2
3
4
8
7
6
5
K
A
A
A
G
S
A
K
TSSOP-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
-30
±12
-4.2
-3.5
-30
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
A
T
A
=70°C
I
F
I
FM
30
3
2
1.4
1
-55 to 150
Typ
73
96
63
75
97
63
40
1.4
1
-55 to 150
Max
90
125
75
90
125
75
V
A
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
