AO8801A 参数 Datasheet PDF下载

AO8801A

20V P-Channel MOSFET

General Description

The AO8801A uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and operation

with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

Features

V

DS

I

D

(at V

GS

=-10V)

R

DS(ON)

(at V

GS

= -4.5V)

R

DS(ON)

(at V

GS

= -2.5V)

R

DS(ON)

(at V

GS

= -1.8V)

-20V

-4.5A

< 42mΩ

< 54mΩ

< 68mΩ

D1

D2

Top View

D1

S1

S1

G1

1

2

3

4

8

7

6

5

D2

S2

S2

G2

G1

G2

S1

S2

C

Absolute Maximum Ratings T

A

=25° unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Power Dissipation

B

C

Maximum

-20

±8

-4.5

-3.6

-30

1.5

0.96

-55 to 150

Units

V

V

A

V

GS

T

A

=25°

C

C

T

A

=70°

T

A

=25°

C

C

T

A

=70°

I

D

I

DM

P

D

T

J

, T

STG

W

°

C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A D

Maximum Junction-to-Lead

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJL

Typ

63

101

64

Max

83

130

83

Units

°

C/W

°

C/W

°

C/W

1/5

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