AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
General Description
The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of performance and robustness in popular AC-DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
600V@150℃
12A
< 0.52Ω
D
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
AOT12N50/AOB12N50
Parameter
Symbol
Drain-Source Voltage
V
DS
500
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF12N50
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
250
2
12
8.4
±30
12*
8.4*
48
5.5
454
908
5
50
0.4
-55 to 150
300
AOT12N50/AOB12N50
65
0.5
0.5
AOTF12N50
65
--
2.5
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Repetitive avalanche energy
Single plused avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
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