AOT210L/AOB210L
30V N-Channel MOSFET
General Description
The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power losses are minimized due to an extremely low combination
of R
DS(ON)
and C
rss
.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
105A
< 2.9mΩ (< 2.6mΩ
∗
)
< 3.7mΩ (< 3.5mΩ
∗
)
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
105
82
400
20
16
68
231
176
88
1.9
1.2
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
54
0.7
Max
15
65
0.85
Units
°C/W
°C/W
°C/W
1/6
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