AOT2608L/AOB2608L
60V N-Channel MOSFET
General Description
The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both conduction and switching power losses are minimized
due to an extremely low combination of R
DS(ON)
, Ciss and Coss.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
60V
72A
< 8.0mΩ (< 7.6mΩ
∗
)
D
G
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
60
±20
72
54
180
11
8.5
50
125
100
50
2.1
1.3
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
48
1.2
Max
15
60
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
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