AOT418L/AOB418L
100V N-Channel MOSFET
General Description
The AOT418L/AOB418L is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with low
gate charge and low Q
rr
.The result is outstanding efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load switching and general purpose applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
105A
< 10mΩ
< 12mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
105
82
280
9.5
7.5
60
180
333
167
2.1
1.3
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
11
47
0.36
Max
15
60
0.45
Units
°C/W
°C/W
°C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
