AOC2411
30V P-Channel MOSFET
General Description
The AOC2411 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating.
Features
Vds
I
D
(at V
GS
=-4.5V)
-30V
-3.4A
R
DS(ON)
(at V
GS
=-4.5V) < 45mΩ
R
DS(ON)
(at V
GS
=-2.5V) < 60mΩ
Bottom View
3
D
D
Top View
Equivalent Circuit
D
2
S
G
Pin1(G)
1
G
S
4
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Source Current (DC)
Note1
Note2
Maximum
-30
±12
-3.4
-52
0.8
-55 to 150
Units
V
V
A
W
°
C
V
GS
T
A
=25°
C
I
D
I
SM
P
D
T
J
, T
STG
Source Current (Pulse)
Power Dissipation
Note1
T
A
=25°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Note1
Maximum Junction-to-Ambient
Note1
Maximum Junction-to-Foot(Drain)
Symbol
t
≤
5s
Steady-State
Steady-State
R
θJA
R
θJF
Typ
75
130
16
Max
90
155
20
Units
°
C/W
°
C/W
°
C/W
Note 1.
Mounted on minimum pad PCB
Note 2.
PW <300
µs
pulses, duty cycle 0.5% max
1/4
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
