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AOC2800 参数 Datasheet PDF下载

AOC2800图片预览
型号: AOC2800
PDF下载: 下载PDF文件 查看货源
内容描述: 常见的漏双N沟道增强型场效应晶体管 [Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 306 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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AOC2800
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AOC2800 uses advanced trench technology to provide excellent R
SS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating.It is ESD protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
Vss
I
D
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=4.0V)
R
SS(ON)
(at V
GS
=3.1V)
R
SS(ON)
(at V
GS
=2.5V)
30V
6A
< 42mΩ
< 44mΩ
< 49mΩ
< 61mΩ
WLCSP 1.57x1.57_4
Equivalent Circuit
Bottom View
G2
Top View
D1
D2
S2
G1
G2
G1
S1
Pin1(S1)
S2
S1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Source-Source Voltage
V
SS
Gate-Source Voltage
Source Current (DC)
Note1
Source Current (Pulse)
Note2
Maximum
30
±12
6
60
1.3
-55 to 150
Units
V
V
A
W
°
C
V
GS
T
A
=25°
C
I
S
I
SM
P
D
T
J
, T
STG
Power Dissipation
Note1
T =25°
C
A
Junction and Storage Temperature Range
Note 1.
Mounted on minimum pad PCB
Note 2.
PW <300
µs
pulses, duty cycle 0.5% max
1/5
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