AOC2802
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AOC2802 uses advanced trench technology to provide excellent R
SS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating.It is ESD protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilita
ted by its
common-drain configuration.
Features
Vss
I
D
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=4.0V)
R
SS(ON)
(at V
GS
=3.1V)
R
SS(ON)
(at V
GS
=2.5V)
20V
6A
< 34mΩ
< 35mΩ
< 43mΩ
< 54mΩ
WLCSP 1.57x1.57_4
Bottom View
Top View
D1
Equivalent Circuit
D2
G2
S2
G1
S1
Pin1(S1)
G1
G2
S1
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
SS
Source-Source Voltage
Gate-Source Voltage
Source Current (DC)
Note1
Source Current (Pulse)
Note2
Power Dissipation
Note1
Maximum
20
±12
6
60
1.3
-55 to 150
Units
V
V
A
W
°
C
V
GS
T
A
=25°
C
I
S
I
SM
P
D
T
J
, T
STG
T
A
=25°
C
Junction and Storage Temperature Range
Note 1.
Mounted on minimum pad PCB
Note 2.
PW <300
µs
pulses, duty cycle 0.5% max
1/5
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