AOD2610
60V N-Channel MOSFET
General Description
The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED
backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
60V
46A
< 10.7mΩ
< 13.5mΩ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
60
±20
46
36
140
10
8
36
65
71.5
35.5
2.5
1.6
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
1.7
Max
20
50
2.1
Units
°
C/W
°
C/W
°
C/W
1/6
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