AOD3N40 参数 Datasheet PDF下载

AOD3N40

400V,2.6A N-Channel MOSFET

General Description

The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC- DC applications.

By providing low R

DS(on)

, C

iss

and C

rss

along with guaranteed avalanche capability this device can be

adopted quickly into new and existing offline power supply designs.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

500V@150℃

2.6A

< 3.1Ω

TO252

DPAK

D

G

S

Absolute Maximum Ratings T

A

=25° unless otherwise noted

C

Parameter

Symbol

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

Current

B

Pulsed Drain Current

Avalanche Current

C

C

H

C

Maximum

400

±30

2.6

1.6

5.6

1.5

34

68

5

50

0.4

-50 to 150

300

Units

V

V

A

A

mJ

mJ

V/ns

W

W/

o

C

°

C

°

C

V

GS

T

C

=25°

C

T

C

=100°

C

I

D

I

DM

I

AR

E

AR

E

AS

dv/dt

P

D

T

J

, T

STG

T

L

Repetitive avalanche energy

Single pulsed avalanche energy

Peak diode recovery dv/dt

T

C

=25°

C

B

Power Dissipation

Derate above 25

o

C

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A,G

Maximum Case-to-sink

A

Maximum Junction-to-Case

D,F

Symbol

R

θJA

R

θCS

R

θJC

Typical

46

-

2.1

Maximum

55

0.5

2.5

Units

°

C/W

°

C/W

°

C/W

1/6

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