AOD4132
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4132 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4mΩ (V
GS
= 10V)
R
DS(ON)
< 6mΩ (V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
B,G
Current
Pulsed Drain Current
Avalanche Current
C
C
Maximum
30
±20
85
63
200
30
112
100
50
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°
C
V
GS
T
C
=25°
C
G
B
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
T
C
=100°
C
T
A
=25°
C
C
T
A
=70°
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14.2
39
0.8
Max
20
50
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
